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  • Title: High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.
    Author: Sun J, Lu A, Wang L, Hu Y, Wan Q.
    Journal: Nanotechnology; 2009 Aug 19; 20(33):335204. PubMed ID: 19636097.
    Abstract:
    Transparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm(2) V(-1) s(-1). The current on/off ratio and the subthreshold swing are found to be 3 x 10(4) and 0.2 V/decade, respectively. These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.
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