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  • Title: Design of high efficiency multi-GHz SiGe HBT electro-optic modulator.
    Author: Deng S, Huang ZR, McDonald JF.
    Journal: Opt Express; 2009 Aug 03; 17(16):13425-8. PubMed ID: 19654748.
    Abstract:
    We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz.
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