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  • Title: Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating.
    Author: Yang C, Hong K, Jang J, Chung DS, An TK, Choi WS, Park CE.
    Journal: Nanotechnology; 2009 Nov 18; 20(46):465201. PubMed ID: 19847029.
    Abstract:
    We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm(2) V(-1) s(-1), which was higher by a factor of approximately 8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.
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