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  • Title: Surface dipole layer potential induced ir absorption enhancement in n-alkanethiol SAMs on GaAs(001).
    Author: Marshall GM, Lopinski GP, Bensebaa F, Dubowski JJ.
    Journal: Langmuir; 2009 Dec 01; 25(23):13561-8. PubMed ID: 19874009.
    Abstract:
    The work function of n-alkanethiol self-assembled monolayers (SAMs) prepared on the GaAs(001) surface was measured using the Kelvin probe technique yielding the SAM 2D dipole layer potential (DLP). Direct n-dependent proportionality between the DLP values and the C-H stretching mode infrared (IR) absorption intensities was observed, which supports a correspondence of reported IR enhancements with the electrostatic properties of the interface. X-ray photoelectron spectroscopy is also used to verify the work function measurements. In addition, the principal components of the refractive index tensor are shown to be n-invariant in the ordered SAM phase. Our results suggest that a local field correction to the transition dipole moment accounts for the observed increase in IR activity through an increase to the electronic polarizability.
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