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  • Title: TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.
    Author: Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K.
    Journal: J Microsc; 2009 Nov; 236(2):115-8. PubMed ID: 19903235.
    Abstract:
    The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the 111 direction. NW with higher Mn concentrations grow along the 110 direction and reveal a branching structure. The main nanowire and branches grow along the 110 directions belonging to only one {111} plane.
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