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  • Title: Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.
    Author: Xian X, Yan K, Zhou W, Jiao L, Wu Z, Liu Z.
    Journal: Nanotechnology; 2009 Dec 16; 20(50):505204. PubMed ID: 19923654.
    Abstract:
    We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics.
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