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Title: Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator. Author: Dong P, Liao S, Feng D, Liang H, Zheng D, Shafiiha R, Kung CC, Qian W, Li G, Zheng X, Krishnamoorthy AV, Asghari M. Journal: Opt Express; 2009 Dec 07; 17(25):22484-90. PubMed ID: 20052172. Abstract: We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).[Abstract] [Full Text] [Related] [New Search]