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  • Title: Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors.
    Author: Zhai T, Fang X, Liao M, Xu X, Li L, Liu B, Koide Y, Ma Y, Yao J, Bando Y, Golberg D.
    Journal: ACS Nano; 2010 Mar 23; 4(3):1596-602. PubMed ID: 20146437.
    Abstract:
    The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
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