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  • Title: GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Author: Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.
    Journal: Nano Lett; 2010 May 12; 10(5):1639-44. PubMed ID: 20377199.
    Abstract:
    We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
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