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  • Title: Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors.
    Author: Son JY, Kim CH, Cho JH, Shin YH, Jang HM.
    Journal: ACS Nano; 2010 Jun 22; 4(6):3288-92. PubMed ID: 20433193.
    Abstract:
    We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R(OFF)). However, for a low resistive state (R(ON)), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R(ON) state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.
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