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  • Title: Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate.
    Author: Orofeo CM, Ago H, Ikuta T, Takahasi K, Tsuji M.
    Journal: Nanoscale; 2010 Sep; 2(9):1708-14. PubMed ID: 20820701.
    Abstract:
    Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO(2)/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO(2)/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of "trench-guided" and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO(2)/Si will greatly contribute to future large-scale nanoelectronic applications.
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