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  • Title: Syntheses and crystal structures of a series of alkaline earth vanadium selenites and tellurites.
    Author: Zhang SY, Hu CL, Sun CF, Mao JG.
    Journal: Inorg Chem; 2010 Dec 20; 49(24):11627-36. PubMed ID: 21090773.
    Abstract:
    Six new novel alkaline-earth metal vanadium(V) or vanadium(IV) selenites and tellurites, namely, Sr(2)(VO)(3)(SeO(3))(5), Sr(V(2)O(5))(TeO(3)), Sr(2)(V(2)O(5))(2)(TeO(3))(2)(H(2)O), Ba(3)(VO(2))(2)(SeO(3))(4), Ba(2)(VO(3))Te(4)O(9)(OH), and Ba(2)V(2)O(5)(Te(2)O(6)), have been prepared and structurally characterized by single crystal X-ray diffraction analyses. These compounds exhibit six different anionic structures ranging from zero-dimensional (0D) cluster to three-dimensional (3D) network. Sr(2)(VO)(3)(SeO(3))(5) features a 3D anionic framework composed of VO(6) octahedra that are bridged by SeO(3) polyhedra. The oxidation state of the vanadium cation is +4 because of the partial reduction of V(2)O(5) by SeO(2) at high temperature. Ba(3)(VO(2))(2)(SeO(3))(4) features a 0D [(VO(2))(SeO(3))(2)](3-) anion. Sr(V(2)O(5))(TeO(3)) displays a unique 1D vanadium(V) tellurite chain composed of V(2)O(8) and V(2)O(7) units connected by tellurite groups, forming 4- and 10-MRs, whereas Sr(2)(V(2)O(5))(2)(TeO(3))(2)(H(2)O) exhibits a 2D layer consisting of [V(4)O(14)] tetramers interconnected by bridging TeO(3)(2-) anions with the Sr(2+) and water molecules located at the interlayer space. Ba(2)(VO(3))Te(4)O(9)(OH) exhibits a one-dimensional (1D) vanadium tellurite chain composed of a novel 1D [Te(4)O(9)(OH)](3-) chain further decorated by VO(4) tetrahedra. Ba(2)V(2)O(5)(Te(2)O(6)) also features a 1D vanadium(V) tellurites chain in which neighboring VO(4) tetrahedra are bridged by [Te(2)O(6)](4-) dimers. The existence of V(4+) ions in Sr(2)(VO)(3)(SeO(3))(5) is also confirmed by magnetic measurements. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory (DFT) methods indicate that all six compounds are wide-band gap semiconductors.
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