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  • Title: Morphological impact of zinc oxide layers on the device performance in thin-film transistors.
    Author: Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg BF, Peukert W, Spiecker E, Halik M.
    Journal: Nanoscale; 2011 Mar; 3(3):897-9. PubMed ID: 21116548.
    Abstract:
    Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.
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