These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Search MEDLINE/PubMed

  • Title: Al2O3/silicon nanoISFET with near ideal nernstian response.
    Author: Chen S, Bomer JG, Carlen ET, van den Berg A.
    Journal: Nano Lett; 2011 Jun 08; 11(6):2334-41. PubMed ID: 21526845.
    Abstract:
    Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-nernstian pH-response for silicon dioxide (SiO(2)) surfaces and near ideal nernstian sensitivity for alumina (Al(2)O(3)) surfaces. Titration experiments of SiO(2) surfaces resulted in a varying pH sensitivity ∼20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al(2)O(3)) surfaces on the nanoISFETs resulted in near ideal nernstian pH sensitivity of 57.8 ± 1.2 mV/pH (pH range: 2-10; T = 22 °C) and temperature sensitivity of 0.19 mV/pH °C (22 °C ≤ T ≤ 40 °C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted ΔpK ≈ 1.5 from the measured responses further supports the near ideal nernstian pH sensitivity.
    [Abstract] [Full Text] [Related] [New Search]