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  • Title: Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.
    Author: Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K.
    Journal: Nano Lett; 2011 Jun 08; 11(6):2311-7. PubMed ID: 21545165.
    Abstract:
    We report a 50% increase in the power conversion efficiency of InAs/GaAs quantum dot solar cells due to n-doping of the interdot space. The n-doped device was compared with GaAs reference cell, undoped, and p-doped devices. We found that the quantum dots with built-in charge (Q-BIC) enhance electron intersubband quantum dot transitions, suppress fast electron capture processes, and preclude deterioration of the open circuit voltage in the n-doped structures. These factors lead to enhanced harvesting and efficient conversion of IR energy in the Q-BIC solar cells.
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