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Title: Electrolyte-induced inversion layer Schottky junction solar cells. Author: Wadhwa P, Seol G, Petterson MK, Guo J, Rinzler AG. Journal: Nano Lett; 2011 Jun 08; 11(6):2419-23. PubMed ID: 21598913. Abstract: A new type of crystalline silicon solar cell is described. Superficially similar to a photoelectrochemical cell a liquid electrolyte creates a depletion (inversion) layer in an n-type silicon wafer, however no regenerative redox couple is present to ferry charge between the silicon and a counter electrode. Instead holes trapped in the electrolyte-induced inversion layer diffuse along the layer until they come to widely spaced grid lines, where they are extracted. The grid lines consist of a single-walled carbon nanotube film etched to cover only a fraction of the n-Si surface. Modeling and simulation shows the inversion layer to be a natural consequence of the device electrostatics. With electronic gating, recently demonstrated to boost the efficiency in related devices, the cell achieves a power conversion efficiency of 12%, exceeding the efficiency of dye sensitized solar cells.[Abstract] [Full Text] [Related] [New Search]