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  • Title: Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide.
    Author: Yamada Y, Ueno K, Fukumura T, Yuan HT, Shimotani H, Iwasa Y, Gu L, Tsukimoto S, Ikuhara Y, Kawasaki M.
    Journal: Science; 2011 May 27; 332(6033):1065-7. PubMed ID: 21617071.
    Abstract:
    The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O(2), by means of electric double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.
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