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  • Title: Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.
    Author: Feng NN, Liao S, Feng D, Wang X, Dong P, Liang H, Kung CC, Qian W, Liu Y, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.
    Journal: Opt Express; 2011 Apr 25; 19(9):8715-20. PubMed ID: 21643123.
    Abstract:
    We present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3 µm silicon-on-isolator (SOI) waveguide. The proposed Ge EA modulator employs a butt-coupled horizontally-oriented p-i-n structure. The optical design achieves a low-loss transition from Ge to Si waveguides. The interaction between the optical mode of the waveguide and the bias induced electric field in the p-i-n structure was maximized to achieve high modulation efficiency. By balancing the trade-offs between the extinction ratio and the insertion loss of the device, an optimal working regime was identified. The measurement results from a fabricated device were used to verify the design. Under a -4Vpp reverse bias, the device demonstrates a total insertion loss (including the transition loss) of 2.7-5.2 dB and an extinction ratio of 4.9-8.2 dB over the wavelength range of 1610-1640 nm. Subtracting the contribution of the transition loss, the Δα/α value for the fabricated device was estimated to be between 2.2 and 3.2 with an electric field around 55 kV/cm.
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