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  • Title: Morphology and temperature dependence of the thermal conductivity of nanoporous SiGe.
    Author: He Y, Donadio D, Galli G.
    Journal: Nano Lett; 2011 Sep 14; 11(9):3608-11. PubMed ID: 21859096.
    Abstract:
    Using molecular dynamics simulations, we show that the thermal conductivity (κ) of Si(0.5)Ge(0.5) can be reduced by more than one order of magnitude by etching nanometer-sized holes in the material, and it becomes almost constant as a function of temperature between 300 and 1100 K for samples with 1 nm wide pores. In nanoporous SiGe, thermal conduction is largely determined by mass disorder and boundary scattering, and thus the dependence of κ on pore distance and on structural, atomistic disorder is much weaker than in the case of nanoporous Si. This indicates that one may minimize κ of the alloy with less stringent morphological constraints than for pure Si.
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