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  • Title: Pockels effect based fully integrated, strained silicon electro-optic modulator.
    Author: Chmielak B, Waldow M, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Nagel M, Merget F, Kurz H.
    Journal: Opt Express; 2011 Aug 29; 19(18):17212-9. PubMed ID: 21935084.
    Abstract:
    We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2)(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V(mod) and the resulting effective index change Δn(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.
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