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  • Title: M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.
    Author: Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.
    Journal: Nano Lett; 2011 Nov 09; 11(11):4839-45. PubMed ID: 21967509.
    Abstract:
    Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.
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