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  • Title: Cryogenic ultra-low-noise SiGe transistor amplifier.
    Author: Ivanov BI, Trgala M, Grajcar M, Il'ichev E, Meyer HG.
    Journal: Rev Sci Instrum; 2011 Oct; 82(10):104705. PubMed ID: 22047315.
    Abstract:
    An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.
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