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  • Title: Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
    Author: Russo-Averchi E, Heiss M, Michelet L, Krogstrup P, Nygard J, Magen C, Morante JR, Uccelli E, Arbiol J, Fontcuberta i Morral A.
    Journal: Nanoscale; 2012 Mar 07; 4(5):1486-90. PubMed ID: 22314270.
    Abstract:
    Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III-V nanowire arrays on the silicon platform.
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