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  • Title: Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications.
    Author: Cushen JD, Otsuka I, Bates CM, Halila S, Fort S, Rochas C, Easley JA, Rausch EL, Thio A, Borsali R, Willson CG, Ellison CJ.
    Journal: ACS Nano; 2012 Apr 24; 6(4):3424-33. PubMed ID: 22456229.
    Abstract:
    Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.
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