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  • Title: Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates.
    Author: Proessdorf A, Grosse F, Perumal K, Braun W, Riechert H.
    Journal: Nanotechnology; 2012 Jun 15; 23(23):235301. PubMed ID: 22595679.
    Abstract:
    The growth of Sb nanowires on GaSb(111)A substrates is studied by in situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the [Formula: see text] and the GaSb crystal along [Formula: see text] directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.
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