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  • Title: Synthesis of S-doped graphene by liquid precursor.
    Author: Gao H, Liu Z, Song L, Guo W, Gao W, Ci L, Rao A, Quan W, Vajtai R, Ajayan PM.
    Journal: Nanotechnology; 2012 Jul 11; 23(27):275605. PubMed ID: 22710561.
    Abstract:
    Doping is a common and effective approach to tailor semiconductor properties. Here, we demonstrate the growth of large-area sulfur (S)-doped graphene sheets on copper substrate via the chemical vapor deposition technique by using liquid organics (hexane in the presence of S) as the precursor. We found that S could be doped into graphene's lattice and mainly formed linear nanodomains, which was proved by elemental analysis, high resolution transmission microscopy and Raman spectra. Measurements on S-doped graphene field-effect transistors (G-FETs) revealed that S-doped graphene exhibited lower conductivity and distinctive p-type semiconductor properties compared with those of pristine graphene. Our approach has produced a new member in the family of graphene based materials and is promising for producing graphene based devices for multiple applications.
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