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  • Title: Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
    Author: Parkinson P, Dodson C, Joyce HJ, Bertness KA, Sanford NA, Herz LM, Johnston MB.
    Journal: Nano Lett; 2012 Sep 12; 12(9):4600-4. PubMed ID: 22924866.
    Abstract:
    The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
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