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  • Title: Negligible environmental sensitivity of graphene in a hexagonal boron nitride/graphene/h-BN sandwich structure.
    Author: Wang L, Chen Z, Dean CR, Taniguchi T, Watanabe K, Brus LE, Hone J.
    Journal: ACS Nano; 2012 Oct 23; 6(10):9314-9. PubMed ID: 23009029.
    Abstract:
    Using Raman spectroscopy, we study the environmental sensitivity of mechanically exfoliated and electrically floating single-layer graphene transferred onto a hexagonal boron nitride (h-BN) substrate, in comparison with graphene deposited on a SiO(2) substrate. In order to understand and isolate the substrate effect on graphene electrical properties, we model and correct for Raman optical interference in the substrates. As-deposited and unannealed graphene shows a large I(2D)/I(G) ratio on both substrates, indicating extremely high quality, close to that of graphene suspended in vacuum. Thermal annealing strongly activates subsequent environmental sensitivity on the SiO(2) substrate; such activation is reduced but not eliminated on the h-BN substrate. In contrast, in a h-BN/graphene/h-BN sandwich structure, with graphene protected on both sides, graphene remains pristine despite thermal processing. Raman data provide a deeper understanding of the previously observed improved graphene electrical conductivity on h-BN substrates. In the sandwich structure, the graphene 2D Raman feature has a higher frequency and narrower line width than in pristine suspended graphene, implying that the local h-BN environment modestly yet measurably changes graphene electron and phonon dispersions.
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