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  • Title: Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.
    Author: Lhuillier E, Keuleyan S, Zolotavin P, Guyot-Sionnest P.
    Journal: Adv Mater; 2013 Jan 04; 25(1):137-41. PubMed ID: 23027629.
    Abstract:
    HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
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