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  • Title: Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Author: Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Journal: Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768.
    Abstract:
    We report the epitaxial growth of defect-free zinc-blende structured InAs nanowires on GaAs{111}(B) substrates using palladium catalysts in a metal-organic chemical vapor deposition reactor. Through detailed morphological, structural, and chemical characterizations using electron microscopy, it is found that these defect-free InAs nanowires grew along the <1[combining overline]1[combining overline]0> directions with four low-energy {111} faceted side walls and {1[combining overline]1[combining overline]3[combining overline]} nanowire/catalyst interfaces. It is anticipated that these defect-free <1[combining overline]1[combining overline]0> nanowires benefit from the fact that the nanowire/catalyst interfaces does not contain the {111} planes, and the nanowire growth direction is not along the <111> directions. This study provides an effective approach to control the crystal structure and quality of epitaxial III-V nanowires.
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