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Title: Large-area Bernal-stacked bi-, tri-, and tetralayer graphene. Author: Sun Z, Raji AR, Zhu Y, Xiang C, Yan Z, Kittrell C, Samuel EL, Tour JM. Journal: ACS Nano; 2012 Nov 27; 6(11):9790-6. PubMed ID: 23110694. Abstract: Few-layer graphene, with Bernal stacking order, is of particular interest to the graphene community because of its unique tunable electronic structure. A synthetic method to produce such large area graphene films with precise thickness from 2 to 4 layers would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform Bernal-stacked bi-, tri-, and tetralayer graphene films were successfully synthesized on a Cu surface in selective growth windows, with a finely tuned total pressure and CH(4)/H(2) gas ratio. On the basis of the analyses obtained, the growth mechanism is not an independent homoexpitaxial layer-by-layer growth, but most likely a simultaneous-seeding and self-limiting process.[Abstract] [Full Text] [Related] [New Search]