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  • Title: InAs(1-x)P(x) nanowires grown by catalyst-free molecular-beam epitaxy.
    Author: Isakov I, Panfilova M, Sourribes MJ, Tileli V, Porter AE, Warburton PA.
    Journal: Nanotechnology; 2013 Mar 01; 24(8):085707. PubMed ID: 23386103.
    Abstract:
    We report on the self-catalysed growth of vertical InAs(1-x)P(x) nanowires on Si(111) substrates by solid-source molecular-beam epitaxy. High-resolution transmission electron microscopy revealed the mixed wurtzite and zincblende structure of the nanowires. Energy dispersive x-ray spectroscopy and x-ray diffraction measurements were used to study the phosphorus content x in the InAs(1-x)P(x) nanowires, which was shown to be in the range 0-10 %. The dependence of phosphorus incorporation in the nanowires on the phosphorus flux in the growth chamber was investigated. The incorporation rate coefficients of As and P in InAs(1x)P(x) nanowires were found to be in the ratio 10 ± 5 to 1.
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