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  • Title: Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Author: Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.
    Journal: Opt Express; 2013 Feb 25; 21(4):4958-69. PubMed ID: 23482028.
    Abstract:
    This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.
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