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  • Title: Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer.
    Author: He S, Li S, Wang F, Wang AY, Lin J, Tan Z.
    Journal: Nanotechnology; 2013 May 03; 24(17):175201. PubMed ID: 23558319.
    Abstract:
    Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoOx) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoOx as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoOx anode buffer layer. The QD-LEDs with a MoOx anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m(-2) and 0.67 cd A(-1) for the yellow emission at 580 nm, and 7842 cd m(-2) and 1.49 cd A(-1) for the red emission at 610 nm, respectively.
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