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  • Title: Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.
    Author: Li X, Xiao Y, Bang JH, Lausch D, Meyer S, Miclea PT, Jung JY, Schweizer SL, Lee JH, Wehrspohn RB.
    Journal: Adv Mater; 2013 Jun 18; 25(23):3187-91. PubMed ID: 23637063.
    Abstract:
    Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
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