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  • Title: ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.
    Author: Nam SY, Choi YS, Lee JH, Park SJ, Lee JY, Lee DS.
    Journal: J Nanosci Nanotechnol; 2013 Jan; 13(1):448-51. PubMed ID: 23646753.
    Abstract:
    We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.
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