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  • Title: Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
    Author: Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z.
    Journal: Nanoscale; 2013 Jun 21; 5(12):5283-7. PubMed ID: 23661186.
    Abstract:
    The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.
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