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  • Title: Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding.
    Author: Gity F, Daly A, Snyder B, Peters FH, Hayes J, Colinge C, Morrison AP, Corbett B.
    Journal: Opt Express; 2013 Jul 15; 21(14):17309-14. PubMed ID: 23938577.
    Abstract:
    We report on the photoresponse of an asymmetrically doped p(-)-Ge/n(+)-Si heterojunction photodiode fabricated by wafer bonding. Responsivities in excess of 1 A/W at 1.55 μm are measured with a 5.4 μm thick Ge layer under surface-normal illumination. Capacitance-voltage measurements show that the interfacial band structure is dependent on both temperature and light level, moving from depletion of holes at -50 °C to accumulation at 20 °C. Interface traps filled by photo-generated and thermally-generated carriers are shown to play a crucial role. Their filling alters the potential barrier height at the interface leading to increased flow of dark current and the above unity responsivity.
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