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Title: Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection. Author: Lu R, Wang Y, Gu L, Wang W, Fang Y, Sha J. Journal: Opt Express; 2013 Jul 29; 21(15):17484-91. PubMed ID: 23938618. Abstract: The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.[Abstract] [Full Text] [Related] [New Search]