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  • Title: Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators.
    Author: Sis SA, Lee S, Lee V, Bayraktaroglu AK, Phillips JD, Mortazawi A.
    Journal: IEEE Trans Ultrason Ferroelectr Freq Control; 2014 Feb; 61(2):231-8. PubMed ID: 24474130.
    Abstract:
    This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. The BST layer, which has a strong electrostrictive effect, is used for electromechanical transduction by means of its voltage-induced piezoelectricity. The silicon layer, with its low mechanical loss, increases the Q of the resonator. The composite FBAR presented here exhibits Qs exceeding 800 with a resonance frequency and Q product (f × Q) of 1026 GHz.
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