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  • Title: Reversibility and stability of ZnO-Sb₂Te₃ nanocomposite films for phase change memory applications.
    Author: Wang G, Chen Y, Shen X, Li J, Wang R, Lu Y, Dai S, Xu T, Nie Q.
    Journal: ACS Appl Mater Interfaces; 2014 Jun 11; 6(11):8488-96. PubMed ID: 24802948.
    Abstract:
    (ZnO)x(Sb2Te3)1-x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb2Te3 film. Sb2Te3-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb2Te3 composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb2Te3 composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge2Sb2Te5. A reversible repetitive optical switching behavior can be observed in (ZnO)5.2(Sb2Te3)94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.
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