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Title: Spin-orbit-torque engineering via oxygen manipulation. Author: Qiu X, Narayanapillai K, Wu Y, Deorani P, Yang DH, Noh WS, Park JH, Lee KJ, Lee HW, Yang H. Journal: Nat Nanotechnol; 2015 Apr; 10(4):333-8. PubMed ID: 25730601. Abstract: Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.[Abstract] [Full Text] [Related] [New Search]