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  • Title: Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.
    Author: Zhang K, Cao YL, Fang YW, Li Q, Zhang J, Duan CG, Yan SS, Tian YF, Huang R, Zheng RK, Kang SS, Chen YX, Liu GL, Mei LM.
    Journal: Nanoscale; 2015 Apr 14; 7(14):6334-9. PubMed ID: 25785667.
    Abstract:
    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal-insulator transition of the CoO(1-v) layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.
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