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Title: Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films. Author: Zhang Y, Mi WB, Wang XC, Zhang XX. Journal: Phys Chem Chem Phys; 2015 Jun 21; 17(23):15435-41. PubMed ID: 26008797. Abstract: The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ'-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAH ∝ ρ(γ)(xx) is larger than 2 in both the epitaxial and polycrystalline γ'-Fe4N films. Although γ > 2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ > 2 is not expected in homogenous epitaxial systems. We demonstrated that γ > 2 results from residual resistivity (ρxx0) in γ'-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.[Abstract] [Full Text] [Related] [New Search]