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Title: Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector. Author: Wu Z, Li X, Zhong H, Zhang S, Wang P, Kim TH, Kwak SS, Liu C, Chen H, Kim SW, Lin S. Journal: Opt Express; 2015 Jul 27; 23(15):18864-71. PubMed ID: 26367550. Abstract: We report a novel ultraviolet photodetector based on graphene/h-BN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW(-1)), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2~20AW(-1)). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.[Abstract] [Full Text] [Related] [New Search]