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Title: Controlled Patterning of Vertical Silicon Structures Using Polymer Lithography and Wet Chemical Etching. Author: Kim HJ, Lee SH, Lee J, Lee ES, Choi JH, Jung JY, Jeong JH, Choi DG. Journal: J Nanosci Nanotechnol; 2015 Jun; 15(6):4522-9. PubMed ID: 26369075. Abstract: In order to improve their performance for various applications, a facile method for the wafer-scale fabrication of micro/nano-patterned vertical silicon (Si) structures such as silicon nanowires (SiNWs), silicon nanorods (SiNRs), and porous silicon (p-Si) was developed. The method is based on the combination of lithography techniques (photolithography, thermal nano-imprint lithography, nanosphere lithography) and wet chemical etching (electro-chemical etching, metal-assisted chemical etching) processes. Micro-patterned p-Si with various pore diameters from 30 nm to 1.2 um were fabricated via electro-chemical etching. Micro/nano-patterned Si microstructures, nanorods, and nanowires were also successfully fabricated by changing the thickness of the metal layer of 5 nm or 20 nm in the metal-assisted chemical etching process. This study also investigated the effect of the etching time and patterning on the etched SiNWs length. This method provides advantages of simplicity, speed, large-scale production, easy size and shape manipulation, and low cost.[Abstract] [Full Text] [Related] [New Search]