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  • Title: Kesterite Cu2Zn(Sn,Ge)(S,Se)4 thin film with controlled Ge-doping for photovoltaic application.
    Author: Zhao W, Pan D, Liu SF.
    Journal: Nanoscale; 2016 May 21; 8(19):10160-5. PubMed ID: 27121893.
    Abstract:
    Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm(2) without an anti-reflection layer.
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