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  • Title: Point contact resistive switching memory based on self-formed interface of Al/ITO.
    Author: Li Q, Qiu L, Wei X, Dai B, Zeng H.
    Journal: Sci Rep; 2016 Jul 07; 6():29347. PubMed ID: 27383005.
    Abstract:
    Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.
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