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  • Title: Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.
    Author: Song X, Gao T, Nie Y, Zhuang J, Sun J, Ma D, Shi J, Lin Y, Ding F, Zhang Y, Liu Z.
    Journal: Nano Lett; 2016 Oct 12; 16(10):6109-6116. PubMed ID: 27579486.
    Abstract:
    Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that ∼85.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as-constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next-generation graphene-based electronics.
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