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  • Title: Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet.
    Author: Kawakami E, Jullien T, Scarlino P, Ward DR, Savage DE, Lagally MG, Dobrovitski VV, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM.
    Journal: Proc Natl Acad Sci U S A; 2016 Oct 18; 113(42):11738-11743. PubMed ID: 27698123.
    Abstract:
    The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of ∼99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to ∼400 μs for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. This work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.
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